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| BUP 203 IGBT Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 G Type BUP 203 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1000 1200 Unit V Pin 2 C Ordering Code Q67078-A4402-A2 Pin 3 E VCE IC Package TO-220 AB 1000V 23A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 23 15 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 46 30 TC = 25 C TC = 90 C Avalanche energy, single pulse EAS 20 mJ IC = 10 A, VCC = 24 V, RGE = 25 L = 3 mH, Tj = 25 C Power dissipation Ptot 165 W -55 ... + 150 -55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-06-1995 BUP 203 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC 0.63 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.7 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 10 A, Tj = 25 C VGE = 15 V, IC = 10 A, Tj = 125 C VGE = 15 V, IC = 10 A, Tj = 150 C Zero gate voltage collector current ICES 150 700 A VCE = 1000 V, VGE = 0 V, Tj = 25 C VCE = 1000 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 100 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 3.5 5.5 1300 100 50 - S pF 1750 150 75 VCE = 20 V, IC = 10 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Dec-06-1995 BUP 203 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit ns 40 60 VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 47 Rise time - tr 30 50 VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 47 Turn-off delay time td(off) 200 300 VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47 Fall time tf 20 30 mWs 1.3 - VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47 Total turn-off loss energy Eoff VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47 Semiconductor Group 3 Dec-06-1995 BUP 203 Power dissipation Ptot = (TC) parameter: Tj 150 C 170 W 140 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 24 A 20 Ptot IC 18 16 120 100 14 12 10 80 60 40 8 6 4 20 2 0 0 20 40 60 80 100 120 C 160 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 t = 16.0s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A K/W IC 10 1 ZthJC 10 -1 100 s D = 0.50 1 ms 0.20 10 -2 10 0 0.10 0.05 10 ms single pulse 0.02 0.01 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Dec-06-1995 BUP 203 Typ. output characteristics Typ. transfer characteristics IC = f(VCE) parameter: tp = 80 s, Tj = 125 C IC = f (VGE) parameter: tP = 80 s, VCE = 20 V, Tj = 25 C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) parameter: Tj = 25 C VCE(sat) = f (VGE) parameter: Tj = 125 C Semiconductor Group 5 Dec-06-1995 BUP 203 Typ. gate charge VGE = (QGate) parameter: IC puls = 10 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 400 V 14 12 10 8 6 4 2 0 0 20 40 60 80 100 800 V nC 130 Q Gate Typ. switching time t = f (RG), inductive load, Tj = 125 C parameter: VCE = 600 V, VGE = 15 V, IC = 10 A Semiconductor Group 6 Dec-06-1995 BUP 203 Package Outlines Dimensions in mm Weight: 8 g Semiconductor Group 7 Dec-06-1995 |
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